Bi-directional punch-through semiconductor device and manufacturing method thereof
US9837516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2017 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | May 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
In one embodiment, a bi-directional punch-through semiconductor device can include: a first transistor in a first region of a semiconductor substrate of a first conductivity type, where the first transistor includes a semiconductor buried layer of a second conductivity type in the semiconductor substrate, and a first epitaxy region of an epitaxy semiconductor layer above the semiconductor buried layer, the semiconductor buried layer being configured as a base of the first transistor; and a second transistor coupled in parallel with the first transistor, where the second transistor is in a second region of the semiconductor substrate of the first conductivity type, where the second transistor comprises a second epitaxy region of the epitaxy semiconductor layer above the semiconductor substrate, and a first doped region of the second conductivity type in the second epitaxy region, the first doped region being configured as a base of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.