Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor
US9837526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2015 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | May 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.