Oxide semiconductor and semiconductor device
US9837549B2 · kind B2 · utility
1Cited by
0References
8Claims
0Family size
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Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
According to one embodiment, an oxide semiconductor includes indium, gallium, and silicon. A concentration of the silicon in the oxide semiconductor is not less than 7 atomic percent and not more than 11 atomic percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.