MBE growth technique for group II-VI inverted multijunction solar cells
US9837563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2009 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.