Electronic device with substrate current management
US9837999B2 · kind B2 · utility
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1References
11Claims
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Assignee
Inventor
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Apr 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An electronic device with substrate current management. The electronic device has a semiconductor substrate in which a Schottky diode is formed. A parasitic PN diode is also formed in the semiconductor substrate, and coexisted with the Schottky diode in parallel. The forward voltage of the Schottky diode is limited to be larger than the forward conduction threshold voltage of the Schottky diode and to be smaller than the forward conduction threshold voltage of the parasitic PN diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.