Sputtering target, oxide semiconducting film, and method for making the same
US9840769B2 · kind B2 · utility
2Cited by
2References
10Claims
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Key dates
| Filing date | Oct 26, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/77
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.