Patent · US Active

Etching in the presence of alternating voltage profile and resulting porous structure

US9840789B2 · kind B2 · utility

4Cited by

1References

22Claims

0Family size

Assignee

CITY UNIVERSITY OF HONG KONG · CN

Inventors

Jie Zhang · Beijing, CN
Yang Li · Santa Clara, US
Jian Lu · Kowloon, CN

Key dates

Filing date	Jan 20, 2014
Grant date	Dec 12, 2017
Priority date	—
Expiry date	Dec 12, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E60/10
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A nanoporous metal structure is made by etching a metal alloy structure of two or more metals. Less than all of the metals are selectively removed (e.g., dissolved in solution) from the alloy in the presence of an alternating voltage profile, for example, a periodic voltage profile. The resulting nanoporous metal structure, having pore openings of about 20 nm to about 500 nm in diameter and a purity of at least about 70%, can be further treated to alter some or all of the structure, and/or to add, remove and/or modify properties thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.