Methods for manufacturing well structures for low-noise chemical sensors
US9841398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2013 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Jan 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4145
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.