Method and apparatus for exposure pattern correction and exposure system
US9841690B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Apr 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7038
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for correcting an exposure pattern on a substrate includes obtaining, based on the exposure pattern, displacement adjustment parameters for adjusting displacements of a worktable supporting the substrate in each of a first direction and a second direction, a rotation angle adjustment parameter for adjusting a rotation angle of the worktable in a rotation direction, and a gap adjustment parameter for adjusting a gap between the worktable and a mask plate. The first direction and the second direction are perpendicular to each other in a horizontal plane. The rotation direction is a direction in which the worktable rotates around a central axis of a base table supporting the mask plate. The method further includes moving the worktable based on the displacement adjustment parameters, the rotation angle adjustment parameter and the gap adjustment parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.