Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium
US9842636B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Apr 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0<x≦0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.