Three-dimensional vertical NOR flash thin film transistor strings
US9842651B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory structure, includes (a) active columns of polysilicon formed above a semiconductor substrate, each active column extending vertically from the substrate and including a first heavily doped region, a second heavily doped region, and one or more lightly doped regions each adjacent both the first and second heavily doped region, wherein the active columns are arranged in a two-dimensional array extending in second and third directions parallel to the planar surface of the semiconductor substrate; (b) charge-trapping material provided over one or more surfaces of each active column; and (c) conductors each extending lengthwise along the third direction. The active columns, the charge-trapping material and the conductors together form a plurality of thin film transistors, with each thin film transistor formed by one of the conductors, a portion of the lightly doped region of an active column, the charge-trapping material between the portion of the lightly doped region and the conductor, and the first and second heavily doped regions. The thin film transistors associated with each active column are organized into one or more vertical NOR strings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.