Semiconductor device and method for fabricating the same
US9842905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Jul 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A semiconductor device includes: a channel layer made of GaN; a barrier layer formed on the channel layer, the bather layer being made of AlGaN and having a larger band gap than the channel layer; a p-type GaN layer selectively formed on the barrier layer; a gate electrode made of ITO on the p-type GaN layer; and a source electrode and a drain electrode on regions of the barrier layer laterally outward of the gate electrode. The width of the gate electrode in the gate length direction is smaller than or equal to the width of the p-type GaN layer in the gate length direction, and the difference between the width of the gate electrode in the gate length direction and the width of the p-type GaN layer in the gate length direction is less than or equal to 0.2 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.