Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode
US9842924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Aug 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a layer having first and second surfaces, a first region including central and peripheral portions, and a second region on the first region. First trenches extend into the first surface and terminate within the first region in the central portion. Each first trench includes a first electrode and a gate electrode over the first electrode. The first and gate electrodes are spaced from the first and second regions by a first insulating layer. A second trench extends into the first surface and terminates within the first region in the peripheral portion. The second trench includes a second electrode and a third electrode over the second electrode. The second and third electrodes are spaced from the first and second regions by a second insulating layer. A fourth electrode overlies the first insulating layer in the central portion and the second insulating layer in the peripheral portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.