Semiconductor device and fabrication method thereof
US9842930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
Abstract
A semiconductor device includes a first gate stack and a second gate stack over a substrate, an isolation structure in the substrate, a first epitaxial (epi) material in the substrate between the first gate stack and the isolation structure, and a second epi material in the substrate between the first gate stack and the second gate stack. The first gate stack is between the isolation structure and the second gate stack. The first epi material includes a first upper surface having a first crystal plane. The second epi material includes a second upper surface having a second crystal plane and a third upper surface having a third crystal plane, and first crystal plane is different from both the second crystal plane and the third crystal plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.