Method for manufacturing semiconductor device
US9842943B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Aug 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for manufacturing a semiconductor device including a film to be treated having a high flatness. A semiconductor substrate having a surface and including a first region and a second region on the surface is prepared, the first region being a region in which a plurality of first level difference portions are formed, the second region being a region in which a plurality of second level difference portions arranged more sparsely than the plurality of first level difference portions are formed, or a region in which no level difference portion is formed. A photosensitive film is formed on a portion of the second region to surround a periphery of the first region as seen in plan view. An applied film having flowability is formed to cover the first region and the photosensitive film. A portion of the applied film at least on the first region is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.