Method of manufacturing nanostructure semiconductor light-emitting device
US9842960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Dec 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
Abstract
According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.