Piezoelectric element
US9842984B2 · kind B2 · utility
1Cited by
1References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 19, 2013 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Sep 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/877
Abstract
Disclosed is a piezoelectric element wherein a lower electrode made of Pt, a buffer layer made of PLT, and a piezoelectric thin film to be a perovskite ferroelectric thin film are formed in this order on a substrate. The average crystal grain size of Pt forming the lower electrode is not smaller than 50 nm and not larger than 150 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.