Memory cell with redundant carbon nanotube
US9842991B2 · kind B2 · utility
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21References
9Claims
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Key dates
| Filing date | Mar 18, 2013 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Mar 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A configuration for a carbon nanotube (CNT) based memory device can include multiple CNT elements in order to increase memory cell yield by reducing the times when a memory cell gets stuck at a high state or a low state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.