Patent · US Active

ESD protection circuit

US9843183B2 · kind B2 · utility

2Cited by

0References

8Claims

0Family size

Assignee

Shanghai Huahong Grace Semiconductor Manufacturing Corporation · CN

Inventor

Bin Lv · Longbeilingcun, CN

Key dates

Filing date	Dec 21, 2015
Grant date	Dec 12, 2017
Priority date	—
Expiry date	Aug 3, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH02H9/046
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An ESD protection circuit is disclosed, in which an RC trigger circuit and a transmission gate are used for determination of ESD protection triggering, and a silicon-controlled rectifier for ESD current conductance. The RC trigger circuit and the transmission gate allow improved trigger efficiency. In addition, the silicon-controlled rectifier incorporates first and second resistors, which can be implemented to have very low resistance values and are therefore able to effectively prevent the occurrence of latch-up during normal operation, as well as pull-up and pull-down transistors which can make an additional contribution to latch-up inhibition when turned on.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.