Stress and temperature compensated hall sensor, and method

US9846204B2 · kind B2 · utility

Assignee

• MELEXIS TECHNOLOGIES SA · CH

Inventors

• Samuel Huber · Hamburg, DE
• Samuel Francois · Métabief, FR

Key dates

• Filing date: May 13, 2016
• Grant date: Dec 19, 2017
• Expiry date: Jun 23, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R33/07
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An integrated semiconductor device for measuring a magnetic field, comprising: a Hall sensor, a first lateral isotropic sensor having a first stress sensitivity and a first temperature sensitivity, a second lateral isotropic sensor having a second stress sensitivity and a second temperature sensitivity, optional amplifying means, digitization means; and calculation means configured for calculating a stress and temperature compensated Hall value in the digital domain, based on a predefined formula which can be expressed as an n-th order polynomial in only two parameters. These parameters may be obtained directly from the sensor elements, or they may be calculated from a set of two simultaneous equations. A method of obtaining a Hall voltage signal, and compensating said signal for stress and temperature drift.