Two-end driving, high-frequency sub-substrate structure and high-frequency transmission structure including the same
US9847307B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2017 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Mar 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B10/801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a two-end driving, high-frequency sub-substrate structure, comprising a sub-substrate body, wherein: the sub-substrate body has an upper side provided with a first signal pad area and a second signal pad area, the first signal pad area and the second signal pad area are symmetric with respect to each other, each of the first signal pad area and the second signal pad area extends from one of two lateral portions of the sub-substrate body in an extending direction toward a center of the sub-substrate body and terminates in an end, the end of the first signal pad area is adjacent to but spaced from the end of the second signal pad area, the first signal pad area is configured for supporting a semiconductor chip provided thereon, the second signal pad area is provided with a jumper wire connected to an electrode of the semiconductor chip, there are two grounding pad areas provided respectively on two lateral sides of the first signal pad area and the second signal pad area and constituting a portion of a coplanar waveguide, the sub-substrate body has an inner layer or bottom side that is provided with a grounding layer or combined with a grounding layer…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.