Pixel cell, image sensor, and manufacturing method
US9847361B2 · kind B2 · utility
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Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80377
Abstract
A pixel cell, a method for manufacturing the same and an image sensor including the same are provided. The pixel cell includes: a substrate; a photodiode, a pass transistor and a floating diffusion structure respectively formed on the substrate, in which the pass transistor is formed between the photodiode and the floating diffusion structure; and a PINNED structure, formed on the substrate and connected with the floating diffusion structure, in which a reset voltage of the floating diffusion structure is higher than a depletion voltage of the PINNED structure.
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