Semiconductor photosensitive unit and semiconductor photosensitive unit array thereof

US9847362B2 · kind B2 · utility

Assignee

• SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD. · CN

Inventors

• Wei Liu · Austin, US
• Lei Liu · Granger, US
• Pengfei Wang · Shanghai, CN

Key dates

• Filing date: Apr 8, 2015
• Grant date: Dec 19, 2017
• Expiry date: Apr 8, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

The present invention relates to a semiconductor photosensitive unit and a semiconductor photosensitive unit array thereof, including a floating gate transistor, a gating MOS transistor and a photodiode that are disposed on a semiconductor substrate. An anode or a cathode of the photodiode is connected to a floating gate of the floating gate transistor through the gating MOS transistor, and the corresponding cathode or anode of the photodiode is connected to a drain of the floating gate transistor or connected to an external electrode. After the gating MOS transistor is switched on, the floating gate is charged or discharged through the photodiode; and after the gating MOS transistor is switched off, charges are stored in the floating gate of the floating gate transistor. Advantages like a small unit area, low surface noise, long charge storage time of the floating gate, and large dynamic range of an operating voltage are achieved.