Image sensor devices and design and manufacturing methods thereof
US9847364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2014 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Aug 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Image sensor devices, design methods thereof, and manufacturing methods thereof are disclosed. In some embodiments, a design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve an optimal ratio of the second length and the first length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.