High-performance radiation detectors and methods of fabricating thereof

US9847369B2 · kind B2 · utility

Assignee

• REDLEN TECHNOLOGIES, INC. · CA

Inventors

• Uri El-Hanany · Rehovot, IL
• Adam Densmore · Victoria, CA
• Saeid Taherion · Victoria, CA
• Georgios Prekas · Lausanne, CH
• Veeramani Perumal · Victoria, CA

Key dates

• Filing date: Feb 3, 2016
• Grant date: Dec 19, 2017
• Expiry date: Sep 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.