Doped multiplier avalanche photodiode
US9847441B2 · kind B2 · utility
17Cited by
2References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Jul 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An epitaxial grown avalanche photodiode (APD), the avalanche photodiode comprising an anode, a cathode, an absorber, and a doped multiplier. The absorber and the doped multiplier are about between the cathode and the anode. The doped multiplier has a multiplier dopant concentration. The doped multiplier substantially depleted during operation of the epitaxial grown photodiode. The doped multiplier may comprise of a plurality of multiplication regions, each of the multiplication regions substantially depleted during operation of the avalanche photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.