Light emitting diode, method of fabricating the same and LED module having the same
US9847457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.