Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics
US9847487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2013 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Nov 22, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.