Apparatus and method for controlling heating of base within chemical vapour deposition chamber
US9851151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2013 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Sep 20, 2034 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF27D2019/0025
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
Provided are an apparatus and a method for controlling the heating of the base within a chemical vapour deposition chamber, which apparatus is applicable to an MOCVD reaction chamber. The apparatus comprises a heater located within a chamber; a tray located near the heater within the chamber and spaced apart from the heater and used for carrying the base; a first temperature control unit coupled with a surface of the tray for carrying the base and used for measuring the temperature of the tray surface and outputting a first control signal as a function of a set temperature and the temperature of the tray surface; and a second temperature control unit connected to the first temperature control unit and used for measuring the temperature of the middle of the area between the tray and the heater, and also for outputting a second control signal as a function of the first control signal and the temperature of the middle, with the heater being coupled with the second temperature control unit to heat according to the second control signal. Further provided is a method for controlling the heating of the base within a chemical vapour deposition chamber. A steady base temperature can be obta…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.