Method of manufacturing semiconductor device
US9852256B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2014 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Feb 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device can reduce congestion across wires while reducing a wire length. The method includes determining a first TSV candidate region in a first die and determining a second TSV candidate region in a second die parallel to the first die. The method also includes determining a first bound region. The first bound region includes a horizontal location of a first pin of the first die and a horizontal location of a second pin of the second die. The method additionally includes calculating an area from overlapped regions between the first bound region and each of the first TSV candidate region and the second TSV candidate region, and performing routing for connecting the first pin and the second pin to each other based on the calculated area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.