Metal nitride material for thermistor, method for producing same, and film thermistor sensor
US9852829B2 · kind B2 · utility
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Key dates
| Filing date | Feb 21, 2013 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jun 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/041
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.