Semiconductor devices with through electrodes and methods of fabricating the same
US9852965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jul 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.