Metal layout for radio-frequency switches
US9852978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Dec 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal layout for radio-frequency (RF) switches. In some embodiments, an RF switching device can include a plurality of field-effect transistors (FETs) arranged in series to form a stack. Each of at least some of the FETs can include a source contact and a drain contact, a first group of fingers electrically connected to the source contact, and a second group of fingers electrically connected to the drain contact and arranged in an interleaved configuration with the first group of fingers. At least some of the first group of fingers and the second group of fingers can include a first metal M1 and a second metal M2 arranged in a stack. At least one of the first metal M1 and the second metal M2 can include a tapered portion to yield a current carrying capacity that varies as a function of location along a direction in which the corresponding finger extends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.