Method of manufacturing a semiconductor device
US9853084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Sep 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A method of manufacturing an image sensor device includes, in a first manufacturing facility, forming a first set of patterned silicon, metal, and insulating layers on a glass substrate, forming an electrical and mechanical protection layer over the first set of patterned silicon, metal, and insulating layers, and, in a second manufacturing facility, removing the electrical and mechanical protection layer, forming a second set of patterned silicon, metal, and insulating layers over the first set of patterned silicon, metal, and insulating layers, forming a plurality of photosensors in communication with at least the second set of patterned silicon, metal, and insulating layers to form an unpassivated image sensor device, and forming a passivation layer over the unpassivated image sensor device. The materials used in the first set of layers and second set of layers can be completely or partially different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.