Hydrogenated graphene with surface doping and bandgap tunability
US9853104B2 · kind B2 · utility
0Cited by
0References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | May 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2236
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; and tuning the bandgap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.