Power MOSFET with metal filled deep source contact
US9853144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jun 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A planar gate power MOSFET includes a substrate having a semiconductor surface doped a first conductivity type, a plurality of transistor cells (cells) including a first cell and at least a second cell each having a gate stack over a body region. A trench has an aspect ratio of >3 extending down from a top side of the semiconductor surface between the gate stacks providing a source contact (SCT) from a source doped a second conductivity type to the substrate. A field plate (FP) is over the gate stacks that provides a liner for the trench. The trench has a refractory metal or platinum-group metal (PGM) metal filler within. A drain doped the second conductivity type is in the semiconductor surface on a side of the gate stacks opposite the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.