Selective emitter solar cell
US9853178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jan 28, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.