Light-emitting diode chip with current spreading layer

US9853188B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Petrus Sundgren · Lappersdorf, DE
• Elmar Baur · Wahrenholz, DE
• Martin Hohenadler · Regensburg, DE
• Clemens Hofmann · Neutraubling, DE

Key dates

• Filing date: Aug 19, 2015
• Grant date: Dec 26, 2017
• Expiry date: Aug 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x≦1.