Resistive random access memory device with reduced power consumption
US9853214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Dec 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.