Patent · US Active

Pulling a semiconductor single crystal according to the Czochralski method

US9856576B2 · kind B2 · utility

0Cited by

5References

22Claims

0Family size

Assignee

HERAEUS QUARZGLAS GMBH & CO. KG · DE

Inventors

Michael Hünermann · Alzenau, DE
Thomas Kayser · Leipzig, DE
Walter Lehmann · Leipzig, DE

Key dates

Filing date	Sep 17, 2013
Grant date	Jan 2, 2018
Priority date	—
Expiry date	Jun 17, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1032
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterized by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.