Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
US9857328B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Aug 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention concerns chemically-sensitive field effect transistors (FETs) are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant chemically-sensitive FETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor material, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. Such chemically-sensitive FETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.