Within-die special oscillator for tracking SRAM memory performance with global process variation, voltage and temperature
US9858217B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a memory, a timing circuit configured to emulate a first operation of the memory to activate a second operation of the memory, a sensor configured to emulate a portion of the timing circuit, and a controller configured to adjust an operating parameter of the memory based on the sensor emulating the portion of the timing circuit. A method is presented. The method includes at least operating a timing circuit to emulate a first operation of the memory, activating a second operation of the memory based on the emulating the first operation of the memory, emulating, by a sensor, a portion of the timing circuit. Another apparatus is presented. The apparatus includes at least a memory, a timing circuit, and means for tracking a performance of the memory based on the timing circuit tracking a memory operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.