GOA circuit based on oxide semiconductor thin film transistor
US9858880B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Sep 3, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/0214
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a GOA circuit based on oxide semiconductor thin film transistor, which cannot only prevent the electrical leakage to raise the reliability of the GOA circuit but also avoid the generation of the crossfire current in the non-function period by shorting the gate and the source of the fortieth thin film transistor (T40) in the first pull-down module (400) for avoiding the influence of the constant high voltage level (DCH) to the pull-down holding of the first node by electrically coupling both the gate and the drain of the seventy-fifth thin film transistor (T75) in the pull-down holding module (600) to the first node (Q(N)), and clearing the interference of the residual charge to the GOA circuit by providing the reset module (700) to reset the first node (Q(N)) before generating the each frame to guarantee the normal output of the GOA circuit and the normal display of the image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.