Magnetic memory
US9858974B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2017 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to embodiments, a magnetic memory includes a structure including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode electrically 5 connected to a first portion of the structure, a second electrode provided between the first magnetic layer and the second, magnetic layer, a third magnetic layer provided insulatingly from a third portion of the structure, a third electrode electrically connected to a second portion of the 10 structure and a sixth magnetic layer provided between the first electrode and the second electrode is provided. In addition, the magnetic memory includes a first semiconductor layer having a first conductivity type electrically connected to the first electrode, a second semiconductor layer having the first conductivity type electrically connected to the third magnetic layer, and a third semiconductor layer having a second conductivity type electrically connected to the first semiconductor layer and the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.