Method of manufacturing element chip
US9859144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma processing process used for a method of manufacturing element chips by which a plurality of element chips are manufactured by dividing a substrate having a plurality of element regions, the substrate is exposed to first plasma, and thereby the substrate is divided into element chips, and the element chips having first surfaces, second surfaces, and side surfaces connecting the first surfaces to the second surfaces are held with an interval between the element chips on the carrier. The element chips are exposed to second plasma which uses a mixed gas of fluorocarbon and helium as a raw material gas, and thereby a protection film covering the side surfaces is formed, and a conductive material is prevented from creeping up to the side surfaces during a mounting process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.