Complementary metal-oxide-semiconductor depth sensor element
US9859313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Aug 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/00
Abstract
A complementary metal-oxide-semiconductor depth sensor element comprises a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. The first and second floating doped regions have dopants of a first polarity and the semiconductor area has dopants of a second polarity opposite to the first polarity. Since the photogate and at least parts of the first and second transfer gates connect to the same semiconductor area and no other dopants of polarity opposite to the second polarity. Therefore, the majority carriers from the photogate excited by lights drift, but not diffuse, to transfer to the first and second transfer gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.