Color image sensor and method of manufacturing the same
US9859319B2 · kind B2 · utility
1Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Oct 27, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.