Magnetic memory devices having a perpendicular magnetic tunnel junction
US9859333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Oct 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.