Processing a semiconductor device

US9859385B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Heimo Hofer · Bodensdorf, AT
• Martin Poelzl · Ossiach, AT
• Maximilian Roesch · Villach, AT
• Britta Wutte · Fürstenfeld, AT

Key dates

• Filing date: Jan 13, 2017
• Grant date: Jan 2, 2018
• Expiry date: Jan 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/668

Abstract

A method of processing a semiconductor device is presented. The method includes providing a semiconductor body; forming a trench within the semiconductor body, the trench having a stripe configuration and extending laterally within an active region of the semiconductor body that is surrounded by a non-active region of the semiconductor body; forming, within the trench, a first electrode and a first insulator insulating the first electrode from the semiconductor body; carrying out a first etching step for partially removing the first electrode along the total lateral extension of the first electrode such that the remaining part of the first electrode has a planar surface, thereby creating a well in the trench that is laterally confined by the first insulator; depositing a second insulator on top the planar surface; and forming a second electrode within the well of the trench. The second insulator insulates the second electrode from the first electrode.