Field effect transistor
US9859411B2 · kind B2 · utility
3Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Apr 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor (a GaN-based HFET) includes a gate electrode, a gate electrode pad, a first wiring line connecting one end of the gate electrode and the gate electrode pad, a second wiring line connecting the other end of the gate electrode and the gate electrode pad, and a resistance element that is connected to the first wiring line and is capable of adjusting the impedance of the first wiring line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.